STP12NM50 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP12NM50
Manufacturer

ST Microelectronics
ChipWorker Part#

CW8828800
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

N-CHANNEL 500V 0.3Ω 12A TO-220/TO-220FP/I2PAK MDMESH POWER MOSFET
Documentation

Datasheet

STP12NM50 Global Supplier

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STP12NM50 Specifications

Attribute	Attribute Value

Part Number	STP12NM50
Manufacturer	ST Microelectronics
ChipWorker Part#	CW8828800
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	500 V
Current Rating	12.0 A
Power Rating	160 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.35 Ω
Polarity	N-Channel
Power Dissipation	160 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	12.0 A
Rise Time	10 ns
Input Capacitance (Ciss)	1000pF @25V(Vds)
Input Power (Max)	160 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	160W (Tc)
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STP12NM50 is a 500V N-channel Power MOSFET developed using revolutionary MDmesh™ technology, which associates the multiple drain process with the PowerMESH™ horizontal layout. This MOSFET offers extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing proprietary strip technique, MOSFET boasts an overall dynamic performance which is superior. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
High dv/dt and avalanche capabilities
Low input capacitance and gate charge
100% Avalanche tested
Low gate input resistance
Tight process control and high manufacturing yields

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