STP14NM50N - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP14NM50N
Manufacturer

ST Microelectronics
ChipWorker Part#

CW8743896
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220 N-CH 500V 12A
Documentation

Datasheet

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STP14NM50N Specifications

Attribute	Attribute Value

Part Number	STP14NM50N
Manufacturer	ST Microelectronics
ChipWorker Part#	CW8743896
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	0.28 Ω
Polarity	N-Channel
Power Dissipation	90 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500 V
Continuous Drain Current (Ids)	12A
Rise Time	9 ns
Input Capacitance (Ciss)	816pF @50V(Vds)
Input Power (Max)	90 W
Fall Time	32 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	90W (Tc)
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	15.75 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/06/16
ECCN Code	EAR99

Product Description

The STP14NM50N is a MDmesh™ II N-channel Power MOSFET developed using the second generation of MDmesh™ technology. The device associates a vertical structure with strip layout yield to lowest ON-resistance and gate charge. It is suitable for the most demanding high efficiency converters.
100% Avalanche tested
Low input capacitance and gate charge
Low gate input resistance

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