STP15NK50Z - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP15NK50Z
Manufacturer

ST Microelectronics
ChipWorker Part#

CW11760343
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220 N-CH 500V 14A
Documentation

Datasheet

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STP15NK50Z Specifications

Attribute	Attribute Value

Part Number	STP15NK50Z
Manufacturer	ST Microelectronics
ChipWorker Part#	CW11760343
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	500 V
Current Rating	14.0 A
Drain to Source Resistance (on) (Rds)	0.3 Ω
Polarity	N-Channel
Power Dissipation	160 W
Threshold Voltage	3.75 V
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	7.00 A
Rise Time	23 ns
Input Capacitance (Ciss)	2260pF @25V(Vds)
Input Power (Max)	160 W
Fall Time	15 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	160W (Tc)
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	15.75 mm
Operating Temperature	-50℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatibility
Applications
■ Switching application

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