STP16NK60Z - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP16NK60Z
Manufacturer

ST Microelectronics
ChipWorker Part#

CW77547837
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220 N-CH 600V 14A
Documentation

Datasheet

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STP16NK60Z Specifications

Attribute	Attribute Value

Part Number	STP16NK60Z
Manufacturer	ST Microelectronics
ChipWorker Part#	CW77547837
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	600 V
Current Rating	14.0 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	420 mΩ
Polarity	N-Channel
Power Dissipation	190 W
Threshold Voltage	3.75 V
Drain to Source Voltage (Vds)	600 V
Breakdown Voltage (Drain to Source)	600 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	14.0 A
Rise Time	25 ns
Input Capacitance (Ciss)	2650pF @25V(Vds)
Input Power (Max)	190 W
Fall Time	15 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	190W (Tc)
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	15.75 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The STP16NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The new SuperMESH™ Power MOSFETS is the result of further design improvements on ST"s well-established strip based PowerMESH™ layout. In addition to significantly lower ON-resistance, the device offers superior dV/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESH™ device further complements an already broad range of innovative high voltage MOSFETs, which includes the revolutionary MDmesh™ products.
100% Avalanche tested
Very low intrinsic capacitance

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