STP20NM50 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP20NM50
Manufacturer

ST Microelectronics
ChipWorker Part#

CW29090677
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

N-CHANNEL 500V - 0.2Ω - 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET
Documentation

Datasheet

STP20NM50 Global Supplier

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STP20NM50 Specifications

Attribute	Attribute Value

Part Number	STP20NM50
Manufacturer	ST Microelectronics
ChipWorker Part#	CW29090677
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	500 V
Current Rating	20.0 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.25 Ω
Polarity	N-Channel
Power Dissipation	192 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	20.0 A
Rise Time	16 ns
Input Capacitance (Ciss)	1480pF @25V(Vds)
Input Power (Max)	192 W
Fall Time	8.5 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	192W (Tc)
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Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The STP20NM50 is a MDmesh™ N-channel Power MOSFET associates the multiple drain process with PowerMESH™ horizontal layout. The device has an outstanding low ON-resistance, impressively high dV/dt and excellent avalanche characteristics and dynamic performances.
High dV/dt and avalanche capabilities
100% Avalanche tested
Low input capacitance and gate charge
Low gate input resistance
-65 to 150°C Operating junction temperature range

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