STP20NM60 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP20NM60
Manufacturer

ST Microelectronics
ChipWorker Part#

CW3488028
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

N-CHANNEL 600V - 0.25Ω - 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET
Documentation

Datasheet

STP20NM60 Global Supplier

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STP20NM60 Specifications

Attribute	Attribute Value

Part Number	STP20NM60
Manufacturer	ST Microelectronics
ChipWorker Part#	CW3488028
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	650 V
Current Rating	20.0 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	290 mΩ
Polarity	N-Channel
Power Dissipation	192 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	600 V
Breakdown Voltage (Drain to Source)	600 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	20.0 A
Rise Time	20 ns
Input Capacitance (Ciss)	1500pF @25V(Vds)
Input Power (Max)	192 W
Fall Time	11 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	192W (Tc)
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The STP20NM60 is a MDmesh™ N-channel Power MOSFET features low input capacitance and gate charge. The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company"s PowerMESH™ horizontal layout. The resulting product has an outstanding low ON-resistance, impressively high dV/dt and excellent avalanche characteristics. The adoption of the company"s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition"s products.
High dV/dt and avalanche capabilities
Low gate input resistance

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