STP25NM60ND - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP25NM60ND
Manufacturer

ST Microelectronics
ChipWorker Part#

CW11293863
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

N-channel 600V, 0.13Ω typ., 21A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220 package
Documentation

Datasheet

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STP25NM60ND Specifications

Attribute	Attribute Value

Part Number	STP25NM60ND
Manufacturer	ST Microelectronics
ChipWorker Part#	CW11293863
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.13 Ω
Polarity	N-Channel
Power Dissipation	160 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	600 V
Rise Time	30 ns
Input Capacitance (Ciss)	2400pF @50V(Vds)
Input Power (Max)	160 W
Fall Time	40 ns
Operating Temperature (Max)	150 ℃
Power Dissipation (Max)	160W (Tc)
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	15.75 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99
HK STC License	NLR

Product Description

The STP25NM60ND is a FDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low ON-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
The worldwide best RDS (ON) area amongst the fast recovery diode device
Low gate input resistance

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