STP315N10F7 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP315N10F7
Manufacturer

ST Microelectronics
ChipWorker Part#

CW71677985
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220 N-CH 100V 180A
Documentation

Datasheet

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STP315N10F7 Specifications

Attribute	Attribute Value

Part Number	STP315N10F7
Manufacturer	ST Microelectronics
ChipWorker Part#	CW71677985
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0023 Ω
Polarity	N-Channel
Power Dissipation	315 W
Threshold Voltage	3.5 V
Input Capacitance	12800 pF
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	180A
Rise Time	108 ns
Input Capacitance (Ciss)	12800pF @25V(Vds)
Input Power (Max)	315 W
Fall Time	40 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	315W (Tc)
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Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STP315N10F7 is a N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced Trench gate structure. The device has very low ON-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
AEC-Q101 qualified
Lowest RDS (ON)
Excellent figure of merit (FoM)
Low CRSS/CISS ratio for EMI immunity
High avalanche ruggedness
-55 to 175°C Operating junction temperature range

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