STP35N65M5 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP35N65M5
Manufacturer

ST Microelectronics
ChipWorker Part#

CW44889676
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220 N-CH 650V 27A
Documentation

Datasheet

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STP35N65M5 Specifications

Attribute	Attribute Value

Part Number	STP35N65M5
Manufacturer	ST Microelectronics
ChipWorker Part#	CW44889676
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Drain to Source Resistance (on) (Rds)	0.085 Ω
Polarity	N-Channel
Power Dissipation	160 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	650 V
Continuous Drain Current (Ids)	27A
Rise Time	12 ns
Input Capacitance (Ciss)	3750pF @100V(Vds)
Input Power (Max)	160 W
Fall Time	16 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	160W (Tc)
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	15.75 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? STMicroelectronics" STP35N65M5 power MOSFET can provide a solution. Its maximum power dissipation is 160000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device is made with mdmesh technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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