STP36NE06 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP36NE06
Manufacturer

ST Microelectronics
ChipWorker Part#

CW383415230
Category

MOSFET, MOSFET Transistor
RoHS

Lead free / RoHS Compliant
Description

N - CHANNEL 60V - 0.032Ω - 36A - TO-220/TO-220FP STripFET POWER MOSFET
Documentation

Datasheet

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STP36NE06 Specifications

Attribute	Attribute Value

Part Number	STP36NE06
Manufacturer	ST Microelectronics
ChipWorker Part#	CW383415230
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Case/Package	TO-220-3
Voltage Rating (DC)	60.0 V
Current Rating	36.0 A
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	32 mΩ
Polarity	N-Channel
Power Dissipation	100 W
Input Capacitance	2.80 nF
Gate Charge	70.0 nC
Drain to Source Voltage (Vds)	60.0 V
Breakdown Voltage (Drain to Source)	60 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	36.0 A
Rise Time	85 ns
Fall Time	25 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	65 ℃
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Product Lifecycle Status	Unknown
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Contains Lead

Product Description

DESCRIPTION
This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less critical alignment steps therefore a remark
able manufacturing reproducibility.
■ TYPICAL RDS(on)= 0.032Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE 100°C
■ APPLICATION ORIENTED CHARACTERIZATION

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