STP4NK50ZFP - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP4NK50ZFP
Manufacturer

ST Microelectronics
ChipWorker Part#

CW93703666
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220FP N-CH 500V 3A
Documentation

Datasheet

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STP4NK50ZFP Specifications

Attribute	Attribute Value

Part Number	STP4NK50ZFP
Manufacturer	ST Microelectronics
ChipWorker Part#	CW93703666
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	2.3 Ω
Polarity	N-Channel
Power Dissipation	20 W
Threshold Voltage	3.75 V
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500 V
Continuous Drain Current (Ids)	1.50 A
Rise Time	7 ns
Input Capacitance (Ciss)	310pF @25V(Vds)
Fall Time	11 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	20W (Tc)
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	16.4 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series comple ments ST full range of high voltage MOSFETs in cluding revolutionary MDmesh™ products.
■ TYPICAL RDS(on) = 2.3 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY

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