STP60NF10 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP60NF10
Manufacturer

ST Microelectronics
ChipWorker Part#

CW3745444
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220 N-CH 100V 80A
Documentation

Datasheet

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STP60NF10 Specifications

Attribute	Attribute Value

Part Number	STP60NF10
Manufacturer	ST Microelectronics
ChipWorker Part#	CW3745444
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	100 V
Current Rating	80.0 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	19 mΩ
Polarity	N-Channel
Power Dissipation	300 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	40.0 A
Rise Time	56 ns
Input Capacitance (Ciss)	4270pF @25V(Vds)
Input Power (Max)	300 W
Fall Time	23 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300W (Tc)
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	15.75 mm
Operating Temperature	-55℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STP60NF10 is a 100V N-channel STripFET™ II Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer application. It is also intended for any application with low gate charge drive requirements. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
Exceptional dv/dt capability
100% Avalanche tested

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