STP6NB80FP - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP6NB80FP
Manufacturer

ST Microelectronics
ChipWorker Part#

CW423571400
Category

MOSFET, MOSFET Transistor
RoHS

Lead free / RoHS Compliant
Description

N-CHANNEL 800V - 1.6Ω - 5.7A TO-220/TO-220FP PowerMesh™ MOSFET
Documentation

Datasheet

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STP6NB80FP Specifications

Attribute	Attribute Value

Part Number	STP6NB80FP
Manufacturer	ST Microelectronics
ChipWorker Part#	CW423571400
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Case/Package	TO-220
Drain to Source Resistance (on) (Rds)	1.90 Ω
Polarity	N-Channel
Power Dissipation	40.0 W
Continuous Drain Current (Ids)	5.70 A
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Product Lifecycle Status	Unknown
RoHS	RoHS Compliant

Product Description

DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
■ TYPICAL RDS(on) = 1.6 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES

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