STP6NK60Z - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP6NK60Z
Manufacturer

ST Microelectronics
ChipWorker Part#

CW9369270
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220 N-CH 600V 6A
Documentation

Datasheet

STP6NK60Z Global Supplier

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STP6NK60Z Specifications

Attribute	Attribute Value

Part Number	STP6NK60Z
Manufacturer	ST Microelectronics
ChipWorker Part#	CW9369270
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	600 V
Current Rating	6.00 A
Power Rating	110 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	1.2 Ω
Polarity	N-Channel
Power Dissipation	110 W
Threshold Voltage	3.75 V
Input Capacitance	905 pF
Drain to Source Voltage (Vds)	600 V
Breakdown Voltage (Drain to Source)	600 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	6.00 A
Rise Time	14 ns
Input Capacitance (Ciss)	905pF @25V(Vds)
Input Power (Max)	110 W
Fall Time	19 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	110000 mW
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

The STP6NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is series is obtained through an extreme optimization of ST"s well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications.
100% Avalanche tested
Extremely high dV/dt capability

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