STP80NF10 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP80NF10
Manufacturer

ST Microelectronics
ChipWorker Part#

CW2014873
Category

MOSFET, MOSFET Transistor
RoHS

Lead free / RoHS Compliant
Description

N-CHANNEL 100V - 0.012Ω - 80A TO-220/TO-220FP LOW GATE CHARGE STRIPFET POWER MOSFET
Documentation

Datasheet

STP80NF10 Global Supplier

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STP80NF10 Specifications

Attribute	Attribute Value

Part Number	STP80NF10
Manufacturer	ST Microelectronics
ChipWorker Part#	CW2014873
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	100 V
Current Rating	80.0 A
Power Rating	300 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.012 Ω
Polarity	N-Channel
Power Dissipation	300 W
Threshold Voltage	3 V
Input Capacitance	5500 pF
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	80.0 A
Rise Time	80 ns
Input Capacitance (Ciss)	5500pF @25V(Vds)
Input Power (Max)	300 W
Fall Time	60 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300W (Tc)
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STP80NF10 is a 100V N-channel STripFET™ II Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer application. It is also intended for any application with low gate charge drive requirements. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
Exceptional dv/dt capability
100% Avalanche tested
Application oriented characterization

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