STP8N65M5 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP8N65M5
Manufacturer

ST Microelectronics
ChipWorker Part#

CW59040469
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220 N-CH 650V 7A
Documentation

Datasheet

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STP8N65M5 Specifications

Attribute	Attribute Value

Part Number	STP8N65M5
Manufacturer	ST Microelectronics
ChipWorker Part#	CW59040469
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.56 Ω
Polarity	N-Channel
Power Dissipation	70 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	650 V
Continuous Drain Current (Ids)	7A
Rise Time	14 ns
Input Capacitance (Ciss)	690pF @100V(Vds)
Input Power (Max)	70 W
Fall Time	11 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	70W (Tc)
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	15.75 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

Create an effective common drain amplifier using this STP8N65M5 power MOSFET from STMicroelectronics. Its maximum power dissipation is 70000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes mdmesh v technology.

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