STP9NB60 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP9NB60
Manufacturer

ST Microelectronics
ChipWorker Part#

CW383415063
Category

MOSFET, MOSFET Transistor
Package

TO-220
Description

TO-220 N-CH 600V 9A
Documentation

Datasheet

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STP9NB60 Specifications

Attribute	Attribute Value

Part Number	STP9NB60
Manufacturer	ST Microelectronics
ChipWorker Part#	CW383415063
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Case/Package	TO-220
Drain to Source Resistance (on) (Rds)	700 mΩ
Polarity	N-Channel
Power Dissipation	125 W
Drain to Source Voltage (Vds)	600 V
Breakdown Voltage (Drain to Source)	600 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	9.00 A
	expand all
Product Lifecycle Status	Unknown
Packaging	Tube
RoHS	Non-Compliant

Product Description

DESCRIPTION
Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
■ TYPICAL RDS(on)= 0.7Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

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