STPSC20065D - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STPSC20065D
Manufacturer

ST Microelectronics
ChipWorker Part#

CW57497900
Category

Schottky Diode
Package

TO-220
Description

Diode Schottky SiC 650V 20A 2Pin(2+Tab) TO-220AC Tube
Documentation

Datasheet

STPSC20065D Global Supplier

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STPSC20065D Specifications

Attribute	Attribute Value

Part Number	STPSC20065D
Manufacturer	ST Microelectronics
ChipWorker Part#	CW57497900
Category	Schottky Diode
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-220
Forward Voltage	1.45 V
Forward Current	20 A
Max Forward Surge Current (Ifsm)	400 A
Maximum Forward Voltage (Max)	1.65 V
Forward Current (Max)	20 A
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Junction Temperature (Max)	175 ℃
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	15.75 mm
Product Lifecycle Status	Active
Packaging	Each
RoHS	Compliant with Exemption
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
**Key Features**
No reverse recovery charge in application current range
Switching behavior independent of temperature
Dedicated to PFC applications
Insulated package TO-220AC ins:
Insulated voltage: 2500 V rms
Typical package capacitance: 7 pF
High forward surge capability
ECOPACK®2 compliant component
Maximum operating: Tj 175 °C

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