STPSC2006CW - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STPSC2006CW
Manufacturer

ST Microelectronics
ChipWorker Part#

CW12599853
Category

Diode Array, TVS Diode Array
Package

TO-247-3
Description

STMICROELECTRONICS STPSC2006CW Silicon Carbide Schottky Diode, SIC, 600V Series, Dual Common Cathode, 600V, 20A, 12NC, TO-247
Documentation

Datasheet

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STPSC2006CW Specifications

Attribute	Attribute Value

Part Number	STPSC2006CW
Manufacturer	ST Microelectronics
ChipWorker Part#	CW12599853
Category	Diode Array, TVS Diode Array
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Forward Voltage	1.7 V
Thermal Resistance	1.2 ℃/W
Reverse recovery time	0 ns
Forward Current	20 A
Max Forward Surge Current (Ifsm)	40 A
Maximum Forward Voltage (Max)	1.7 V
Forward Current (Max)	20000 mA
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Junction Temperature (Max)	175 ℃
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Operating Temperature	-40℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STPSC2006CW is a Power Schottky Silicon Carbide Diode features ultra high performance. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. ST SiC diode will boost the performance of PFC operations in hard switching conditions.
No or negligible reverse recovery
Switching behaviour independent of temperature
Particularly suitable in PFC boost diode function

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