STPSC20H065CW - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STPSC20H065CW
Manufacturer

ST Microelectronics
ChipWorker Part#

CW9445063
Category

Diode Array, TVS Diode Array
Package

TO-247-3
Description

STMICROELECTRONICS STPSC20H065CW Silicon Carbide Schottky Diode, SIC, 650V Series, Dual Common Cathode, 650V, 20A, 28.5NC, TO-247
Documentation

Datasheet

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STPSC20H065CW Specifications

Attribute	Attribute Value

Part Number	STPSC20H065CW
Manufacturer	ST Microelectronics
ChipWorker Part#	CW9445063
Category	Diode Array, TVS Diode Array
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Forward Voltage	1.75V @10A
Reverse recovery time	0 ns
Forward Current	20 A
Max Forward Surge Current (Ifsm)	470 A
Maximum Forward Voltage (Max)	1.75V @10A
Forward Current (Max)	20 A
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Junction Temperature (Max)	175 ℃
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Operating Temperature	-40℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
**Key Features**
No or negligible reverse recovery
Switching behavior independent of temperature
Dedicated to PFC applications
High forward surge capability

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