STPSC806D - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STPSC806D
Manufacturer

ST Microelectronics
ChipWorker Part#

CW4163035
Category

Schottky Diode
Package

TO-220-2
Description

STMICROELECTRONICS STPSC806D Silicon Carbide Schottky Diode, SIC, 600V Series, Single, 600V, 8A, 10NC, TO-220AC
Documentation

Datasheet

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STPSC806D Specifications

Attribute	Attribute Value

Part Number	STPSC806D
Manufacturer	ST Microelectronics
ChipWorker Part#	CW4163035
Category	Schottky Diode
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-220-2
Forward Voltage	1.7V @8A
Thermal Resistance	2.4℃/W (RθJC)
Reverse recovery time	0 ns
Forward Current	8 A
Max Forward Surge Current (Ifsm)	120 A
Maximum Forward Voltage (Max)	2.1 V
Forward Current (Max)	8 A
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Junction Temperature (Max)	175 ℃
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	15.75 mm
Operating Temperature	-40℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
ST SiC diodes will boost the performance of PFC operations in hard switching conditions.
**Key Features**
No or negligible reverse recovery
Switching behavior independent of temperature
Particularly suitable in PFC boost diode function

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