STTH12012TV1 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STTH12012TV1
Manufacturer

ST Microelectronics
ChipWorker Part#

CW12876138
Category

Power Diode
Package

ISOTOP
Description

STMICROELECTRONICS STTH12012TV1 Fast / Ultrafast Diode, 1.2kV, 60A, Dual Isolated, 1.3V, 50ns, 420A
Documentation

Datasheet

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STTH12012TV1 Specifications

Attribute	Attribute Value

Part Number	STTH12012TV1
Manufacturer	ST Microelectronics
ChipWorker Part#	CW12876138
Category	Power Diode
Documentation	Datasheet
Mounting Style	Screw
Number of Pins	4 Pin
Case/Package	ISOTOP
Voltage Rating (DC)	1.20 kV
Current Rating	60.0 A
Output Current	≤60.0 A
Forward Voltage	2.25V @60A
Polarity	Standard
Reverse recovery time	125 ns
Forward Current	60 A
Max Forward Surge Current (Ifsm)	420 A
Maximum Forward Voltage (Max)	1.3 V
Forward Current (Max)	120 A
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Junction Temperature	150℃ (Max)
Junction Temperature (Max)	150 ℃
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Size-Length	38.2 mm
Size-Width	25.5 mm
Size-Height	9.1 mm
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STTH12012TV1 is an Ultra-fast Recovery Diode with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications include industrial power supplies and similar mission-critical systems that require rectification and free-wheeling. It fit into auxiliary functions such as snubber, bootstrap and demagnetization applications. The improved performance in low leakage current and therefore thermal runaway guard band, is an immediate competitive advantage for this device.
Soft recovery
Very low conduction and switching losses
High frequency and/or high pulsed current operation
High reverse voltage capability
High junction temperature

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