STTH3010W - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STTH3010W
Manufacturer

ST Microelectronics
ChipWorker Part#

CW15112215
Category

TVS Diode
Package

DO-247-2
Description

STMICROELECTRONICS STTH3010W Fast / Ultrafast Power Diode, 1kV, 20A, Single, 1.3V, 42ns, 180A
Documentation

Datasheet

STTH3010W Global Supplier

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STTH3010W Specifications

Attribute	Attribute Value

Part Number	STTH3010W
Manufacturer	ST Microelectronics
ChipWorker Part#	CW15112215
Category	TVS Diode
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	DO-247-2
Voltage Rating (DC)	1.00 kV
Current Rating	30.0 A
Capacitance	12.0 pF
Output Current	≤30.0 A
Forward Voltage	2V @30A
Polarity	Standard
Thermal Resistance	1.1 ℃/W
Reverse recovery time	42 ns
Forward Current	20 A
Max Forward Surge Current (Ifsm)	180 A
Maximum Forward Voltage (Max)	1.3 V
Forward Current (Max)	30 A
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-65 ℃
Junction Temperature	175℃ (Max)
Junction Temperature (Max)	175 ℃
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Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	20.15 mm
Operating Temperature	-65℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STTH3010W is a high voltage ultrafast Recovery Diode. The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications include similar mission-critical systems that require rectification and freewheeling. This diode also fit into auxiliary functions such as snubber, bootstrap and demagnetization applications. The improved performance in low leakage current and therefore thermal runaway guard band, is an immediate competitive advantage for this device.
Very low conduction and switching losses
High frequency or high pulsed current operation
High reverse voltage capability
High junction temperature
50A RMS forward current
1.1°C/W Junction-to-case thermal resistance
175°C Maximum operating junction temperature

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