STTH3012W - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STTH3012W
Manufacturer

ST Microelectronics
ChipWorker Part#

CW22825345
Category

TVS Diode
Package

DO-247-2
Description

STMICROELECTRONICS STTH3012W Standard Power Diode, 1.2kV, 30A, Single, 1.3V, 57ns, 210A
Documentation

Datasheet

STTH3012W Global Supplier

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STTH3012W Specifications

Attribute	Attribute Value

Part Number	STTH3012W
Manufacturer	ST Microelectronics
ChipWorker Part#	CW22825345
Category	TVS Diode
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	DO-247-2
Voltage Rating (DC)	1.20 kV
Current Rating	30.0 A
Output Current	≤30.0 A
Number of Positions	2 Position
Forward Voltage	2.25V @30A
Polarity	Standard
Thermal Resistance	0.95℃/W (RθJC)
Reverse recovery time	115 ns
Forward Current	30 A
Max Forward Surge Current (Ifsm)	210 A
Maximum Forward Voltage (Max)	1.3 V
Forward Current (Max)	30 A
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-65 ℃
Junction Temperature	175℃ (Max)
Junction Temperature (Max)	175 ℃
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Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	20.15 mm
Operating Temperature	-65℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The STTH3012W is an Ultrafast Recovery Diode with epoxy (UL94V-0) case. The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy-duty applications that demand long term reliability. Such demanding applications include industrial power supplies and similar mission-critical systems that require rectification and freewheeling. It also fits into auxiliary functions such as snubber, bootstrap and demagnetization applications. The improved performance in low leakage current and therefore thermal runaway guard band, is an immediate competitive advantage for this device.
Very low conduction and switching losses
High frequency and/or high pulsed current operation
High reverse voltage capability
High junction temperature

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