STTH6010W - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STTH6010W
Manufacturer

ST Microelectronics
ChipWorker Part#

CW15510803
Category

Power Diode
Package

DO-247-2
Description

Fast / Ultrafast Diode, 1kV, 60A, Single, 1.3V, 49ns, 400A
Documentation

Datasheet

STTH6010W Global Supplier

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STTH6010W Specifications

Attribute	Attribute Value

Part Number	STTH6010W
Manufacturer	ST Microelectronics
ChipWorker Part#	CW15510803
Category	Power Diode
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	DO-247-2
Voltage Rating (DC)	1.00 kV
Current Rating	60.0 A
Output Current	≤60.0 A
Forward Voltage	2V @60A
Polarity	Standard
Thermal Resistance	0.78 ℃/W
Reverse recovery time	49 ns
Forward Current	60 A
Max Forward Surge Current (Ifsm)	400 A
Maximum Forward Voltage (Max)	1.3 V
Forward Current (Max)	60000 mA
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-65 ℃
Junction Temperature	175℃ (Max)
Junction Temperature (Max)	175 ℃
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Operating Temperature	-65℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Each
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/06/16

Product Description

The STTH6010W is an ultra-fast recovery High-voltage Diode with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications include industrial power supplies and similar mission-critical systems that require rectification and free-wheeling. It fit into auxiliary functions such as snubber, bootstrap and demagnetization applications. The improved performance in low leakage current and therefore thermal runaway guard band, is an immediate competitive advantage for this device.
Soft recovery
Very low conduction and switching losses
High frequency and/or high pulsed current operation
High reverse voltage capability
High junction temperature

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