STW11NK100Z - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STW11NK100Z
Manufacturer

ST Microelectronics
ChipWorker Part#

CW1945503
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

Power MOSFET, N Channel, 8.3A, 1kV, 1.38Ω, 10V, 3.75V
Documentation

Datasheet

STW11NK100Z Global Supplier

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STW11NK100Z Specifications

Attribute	Attribute Value

Part Number	STW11NK100Z
Manufacturer	ST Microelectronics
ChipWorker Part#	CW1945503
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	1.00 kV
Current Rating	8.30 A
Power Rating	230 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	1.38 Ω
Polarity	N-Channel
Power Dissipation	230 W
Threshold Voltage	3.75 V
Drain to Source Voltage (Vds)	1000 V
Breakdown Voltage (Drain to Source)	1.00 kV
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	8.30 A
Rise Time	18 ns
Input Capacitance (Ciss)	3500pF @25V(Vds)
Input Power (Max)	230 W
Fall Time	55 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	230W (Tc)
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Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	20.15 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STW11NK100Z is a 1000V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
Extremely high dv/dt capability
100% Avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Very good manufacturing repeatability
ESD sensitive device, take proper precaution while handling the device.

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