STW20N95K5 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STW20N95K5
Manufacturer

ST Microelectronics
ChipWorker Part#

CW4221640
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

TO-247 N-CH 950V 17.5A
Documentation

Datasheet

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STW20N95K5 Specifications

Attribute	Attribute Value

Part Number	STW20N95K5
Manufacturer	ST Microelectronics
ChipWorker Part#	CW4221640
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.275 Ω
Polarity	N-Channel
Power Dissipation	250 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	950 V
Continuous Drain Current (Ids)	17.5A
Rise Time	12 ns
Input Capacitance (Ciss)	1500pF @100V(Vds)
Input Power (Max)	250 W
Fall Time	20 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	250W (Tc)
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Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	20.15 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STW20N95K5 is a 950V N-channel Power MOSFET developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
Worldwide best RDS (on)
Worldwide best FOM (figure of merit)
Ultra low gate charge
100% Avalanche tested
Zener-protected
ESD sensitive device, take proper precaution while handling the device.

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