STW20NM60 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STW20NM60
Manufacturer

ST Microelectronics
ChipWorker Part#

CW1143546
Category

High Voltage MOS Transistor
Package

TO-247-3
Description

TO-247 N-CH 600V 20A
Documentation

Datasheet

STW20NM60 Global Supplier

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STW20NM60 Specifications

Attribute	Attribute Value

Part Number	STW20NM60
Manufacturer	ST Microelectronics
ChipWorker Part#	CW1143546
Category	High Voltage MOS Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	650 V
Current Rating	20.0 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.25 Ω
Polarity	N-Channel
Power Dissipation	192 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	600 V
Breakdown Voltage (Drain to Source)	600 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	20.0 A
Rise Time	20 ns
Input Capacitance (Ciss)	1500pF @25V(Vds)
Input Power (Max)	192 W
Fall Time	11 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	192W (Tc)
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Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The STW20NM60 is a 600V N-channel Power MOSFET developed using revolutionary MDmesh™ technology, which associates the multiple drain process with the PowerMESH™ horizontal layout. This MOSFET offers extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing proprietary strip technique, MOSFET boasts an overall dynamic performance which is superior. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
High dv/dt and avalanche capabilities
100% Avalanche tested
Low input capacitance and gate charge
Low gate input resistance

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