STW25NM60ND - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STW25NM60ND
Manufacturer

ST Microelectronics
ChipWorker Part#

CW10516230
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

TO-247 N-CH 600V 21A
Documentation

Datasheet

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STW25NM60ND Specifications

Attribute	Attribute Value

Part Number	STW25NM60ND
Manufacturer	ST Microelectronics
ChipWorker Part#	CW10516230
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.13 Ω
Polarity	N-Channel
Power Dissipation	160 W
Threshold Voltage	4 V
Input Capacitance	2400 pF
Drain to Source Voltage (Vds)	600 V
Continuous Drain Current (Ids)	21A
Rise Time	30 ns
Input Capacitance (Ciss)	2400pF @50V(Vds)
Input Power (Max)	160 W
Fall Time	40 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	160W (Tc)
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Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	20.15 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The STW25NM60ND is a FDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low ON-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
The worldwide best RDS (ON) area amongst the fast recovery diode device
100% Avalanche tested
Extremely high dV/dt and avalanche capabilities

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