TC4426AEOA - Microchip

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TC4426AEOA
Manufacturer

Microchip
ChipWorker Part#

CW11041496
Category

FET Driver
Package

SOIC-8
Description

TC4426AEOA, Dual MOSFET Power Driver, 1.5A, 4.5 to 18V, Inverting, 8Pin SOIC
Documentation

Datasheet

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TC4426AEOA Specifications

Attribute	Attribute Value

Part Number	TC4426AEOA
Manufacturer	Microchip
ChipWorker Part#	CW11041496
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Supply Voltage (DC)	4.50V (min)
Operating Voltage	4.5V ~ 18V
Rise/Fall Time	25 ns
Number of Outputs	2 Output
Output Voltage	18.0 V, 18.0 V (max)
Output Current	1.50 A
Supply Current	4.50 mA
Number of Positions	8 Position
Power Dissipation	470 mW
Rise Time	35 ns
Fall Time	35 ns
Fall Time (Max)	35 ns
Fall Time (Max)	35 ns
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	470 mW
Supply Voltage	4.5V ~ 18V
Supply Voltage (Max)	18 V
Supply Voltage (Min)	4.5 V
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Size-Length	4.9 mm
Size-Width	3.91 mm
Size-Height	1.42 mm
Operating Temperature	-40℃ ~ 85℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The TC4426AEOA is a 1.5A dual inverting high-speed Power MOSFET Driver for pulse transformer drive. The TC4426A device has matched leading and falling edge propagation delay times. The device is highly latch-up resistant under any conditions within their power and voltage ratings. It is not subject to damage when up to 5V of noise spiking (of either polarity) occurs on the ground pin. It can accept, without damage or logic upset, up to 500mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against Electrostatic Discharge (ESD) up to 2kV. The TC4426A MOSFET driver can easily charge/discharge 1000pF gate capacitances in under 30ns. This device provides low enough impedances in both the on and off states to ensure the MOSFET"s intended state will not be affected, even by large transients.
Matched rise, fall and delay times
7R Low output impedance (typical)
Input withstands negative inputs up to 5V
2kV Electrostatic Discharge (ESD) protected
ESD sensitive device, take proper precaution while handling the device.

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