TC4426EOA - Microchip

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TC4426EOA
Manufacturer

Microchip
ChipWorker Part#

CW916850
Category

FET Driver
Package

SOIC-8
Description

TC4426EOA; Dual MOSFET Power Driver 1.5A; 4.5 to 18V; Inverting; 8Pin SOIC
Documentation

Datasheet

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TC4426EOA Specifications

Attribute	Attribute Value

Part Number	TC4426EOA
Manufacturer	Microchip
ChipWorker Part#	CW916850
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Supply Voltage (DC)	4.50V (min)
Operating Voltage	4.5V ~ 18V
Rise/Fall Time	19 ns
Number of Outputs	2 Output
Output Voltage	18.0 V
Output Current	1.5 A
Supply Current	4.50 mA
Number of Channels	2 Channel
Number of Positions	8 Position
Power Dissipation	0.47 W
Rise Time	40ns (Max)
Fall Time	40ns (Max)
Fall Time (Max)	30 ns
Fall Time (Max)	30 ns
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	470 mW
Supply Voltage	4.5V ~ 18V
Supply Voltage (Max)	18 V
Supply Voltage (Min)	4.5 V
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Size-Length	4.9 mm
Size-Width	3.91 mm
Size-Height	1.42 mm
Operating Temperature	-40℃ ~ 85℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

The TC4426EOA is a dual inverting high-speed Power MOSFET Driver for pulse transformer drive. The TC4426 device have matched rise and fall times when charging and discharging the gate of a MOSFET. This device is highly latch-up resistant under any conditions within their power and voltage ratings. It is not subject to damage when up to 5V of noise spiking (of either polarity) occurs on the ground pin. It can accept, without damage or logic upset, up to 500mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against Electrostatic Discharge (ESD) up to 2.0kV. The TC4426 MOSFET driver can easily charge/discharge 1000pF gate capacitances in under 30ns. This device provide low enough impedances in both the on and off states to ensure the MOSFET"s intended state is not affected, even by large transients.
Matched rise and fall times
Input withstands negative inputs
Consistent delay times with changes in supply voltage
7R Typical low output impedance
ESD protected of 2kV HBM
ESD sensitive device, take proper precaution while handling the device.

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