TIP100G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TIP100G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW11826326
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220AB NPN 60V 8A
Documentation

Datasheet

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TIP100G Specifications

Attribute	Attribute Value

Part Number	TIP100G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW11826326
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	60.0 V
Current Rating	8.00 A
Output Voltage	60 V
Output Current	8 A
Number of Positions	3 Position
Input Current	1 A
Polarity	NPN
Power Dissipation	80 W
Breakdown Voltage (Collector to Emitter)	60 V
Thermal Resistance	62.5℃/W (RθJA)
Continuous Collector Current	8A
hFE Min	1000 @3A, 4V
Input Power (Max)	2 W
DC Current Gain (hFE)	20
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	2000 mW
Input Voltage	2.8 V
	expand all
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Designed for general−purpose amplifier and low−speed switching applications.
Features
•High DC Current Gain −hFE = 2500 (Typ) @ IC= 4.0 Adc
•Collector−Emitter Sustaining Voltage − @ 30 mAdc
VCEO(sus)= 60 Vdc (Min) − TIP100, TIP105
= 80 Vdc (Min) − TIP101, TIP106
= 100 Vdc (Min) − TIP102, TIP107
•Low Collector−Emitter Saturation Voltage − VCE(sat)= 2.0 Vdc (Max) @ IC
= 3.0 Adc
= 2.5 Vdc (Max) @ IC= 8.0 Adc
•Monolithic Construction with Built−in Base−Emitter Shunt Resistors
•Pb−Free Packages are Available

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