TIP102G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TIP102G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW1849754
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220AB NPN 100V 8A
Documentation

Datasheet

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TIP102G Specifications

Attribute	Attribute Value

Part Number	TIP102G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW1849754
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	100 V
Current Rating	8.00 A
Output Voltage	100 V
Output Current	8 A
Number of Positions	3 Position
Input Current	1 A
Polarity	NPN
Power Dissipation	80 W
Breakdown Voltage (Collector to Emitter)	100 V
Thermal Resistance	62.5℃/W (RθJA)
Continuous Collector Current	8A
hFE Min	200
hFE Max	20000
Input Power (Max)	2 W
DC Current Gain (hFE)	200
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	2000 mW
Input Voltage	2.8 V
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Size-Length	10.28 mm
Size-Width	4.83 mm
Size-Height	9.28 mm
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/12/17
ECCN Code	EAR99

Product Description

The TIP102G is a 8A NPN bipolar power Darlington Transistor designed for general-purpose amplifier and low speed switching applications.
Complementary device
Monolithic construction with built-in base-emitter shunt resistors

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