TIP112 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TIP112
Manufacturer

ST Microelectronics
ChipWorker Part#

CW676444
Category

BJT Transistor, BJT
Package

TO-220-3
Description

Trans Darlington NPN 100V 2A 2000mW 3Pin(3+Tab) TO-220 Tube
Documentation

Datasheet

TIP112 Global Supplier

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TIP112 Specifications

Attribute	Attribute Value

Part Number	TIP112
Manufacturer	ST Microelectronics
ChipWorker Part#	CW676444
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	100 V
Current Rating	2.00 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	2 W
Breakdown Voltage (Collector to Emitter)	100 V
hFE Min	1000 @1A, 4V
Input Power (Max)	2 W
DC Current Gain (hFE)	1000
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	2000 mW
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The TIP112 is a NPN complementary silicon epitaxial-base Power Transistor with monolithic Darlington configuration mounted in a JEDEC plastic package. It is intended for use in medium power linear and switching applications.
Integrated anti-parallel collector-emitter diode
PNP complementary type is TIP117

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