TIP120 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TIP120
Manufacturer

ST Microelectronics
ChipWorker Part#

CW172800
Category

BJT Transistor, BJT
Package

TO-220-3
Description

Trans Darlington NPN 60V 5A 2000mW 3Pin(3+Tab) TO-220 Tube
Documentation

Datasheet

TIP120 Global Supplier

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TIP120 Specifications

Attribute	Attribute Value

Part Number	TIP120
Manufacturer	ST Microelectronics
ChipWorker Part#	CW172800
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	60.0 V
Current Rating	5.00 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	65 W
Breakdown Voltage (Collector to Emitter)	60 V
hFE Min	1000 @3A, 3V
Input Power (Max)	2 W
DC Current Gain (hFE)	1000
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	2000 mW
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Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The TIP120 from STMicroelectronics is a through hole complementary power darlington transistor in TO-220 package. This device manufactured in planar technology with "base island" layout and monolithic darlington configuration resulting in exceptional high gain performance coupled with very low saturation voltage.
Collector to emitter voltage (Vce) is 60V
Collector current (Ic) is 5A
Power dissipation (Pd) is 65W
Collector to emitter saturation voltage of 4V at 5A collector current
DC current gain (hFE) of 1000
Operating junction temperature range from 150°C

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