TIP121G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TIP121G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW5420150
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220AB NPN 80V 5A
Documentation

Datasheet

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TIP121G Specifications

Attribute	Attribute Value

Part Number	TIP121G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW5420150
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	80.0 V
Current Rating	5.00 A
Output Voltage	80 V
Output Current	5 A
Number of Positions	3 Position
Input Current	120 mA
Polarity	NPN
Power Dissipation	65 W
Breakdown Voltage (Collector to Emitter)	80 V
Thermal Resistance	62.5℃/W (RθJA)
Continuous Collector Current	5A
hFE Min	1000 @3A, 3V
Input Power (Max)	2 W
DC Current Gain (hFE)	1000
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	2000 mW
Input Voltage	2.5 V
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Size-Length	10.28 mm
Size-Width	4.83 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Amplify your current with the NPN TIP121G Darlington transistor, developed by ON Semiconductor. This Darlington transistor array"s maximum emitter base voltage is 5 V. This product"s maximum continuous DC collector current is 5 A, while its minimum DC current gain is 1000@0.5A@3 V|1000@3A@3V. It has a maximum collector emitter saturation voltage of 2@12mA@3A|4@20mA@5A V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.

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