TIP125G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TIP125G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW9187200
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220AB PNP 60V 5A
Documentation

Datasheet

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TIP125G Specifications

Attribute	Attribute Value

Part Number	TIP125G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW9187200
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	-60.0 V
Current Rating	-5.00 A
Output Voltage	60 V
Output Current	5 A
Number of Positions	3 Position
Input Current	120 mA
Polarity	PNP, P-Channel
Power Dissipation	65 W
Breakdown Voltage (Collector to Emitter)	60 V
Thermal Resistance	62.5℃/W (RθJA)
Continuous Collector Current	5A
hFE Min	1000
Input Power (Max)	2 W
DC Current Gain (hFE)	1000
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	65 W
Input Voltage	2.5 V
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Size-Length	15.75 mm
Size-Width	4.83 mm
Size-Height	4.82 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

**PNP Darlington Transistors, ON Semiconductor**
These Darlington transistors by ON Semiconductor are a compound structure consisting of two bipolar transistors, either integrated or separated devices. These devices are connected so the current amplified by the first transistor is further amplified by the second device.

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