TIP29CG - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TIP29CG
Manufacturer

ON Semiconductor
ChipWorker Part#

CW6115037
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220AB NPN 100V 1A
Documentation

Datasheet

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TIP29CG Specifications

Attribute	Attribute Value

Part Number	TIP29CG
Manufacturer	ON Semiconductor
ChipWorker Part#	CW6115037
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Frequency	3 MHz
Voltage Rating (DC)	100 V
Current Rating	1.00 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	30 W
Breakdown Voltage (Collector to Emitter)	100 V
Thermal Resistance	4.167℃/W (RθJC)
Continuous Collector Current	1A
hFE Min	15 @1A, 4V
Input Power (Max)	2 W
DC Current Gain (hFE)	75
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	30 W
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Size-Length	10.28 mm
Size-Width	4.82 mm
Size-Height	15.75 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The versatility of this NPN TIP29CG GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

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