TIP3055 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TIP3055
Manufacturer

ST Microelectronics
ChipWorker Part#

CW350731
Category

BJT Transistor, BJT
Package

TO-247-3
Description

Trans GP BJT NPN 60V 15A 90000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

TIP3055 Global Supplier

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TIP3055 Specifications

Attribute	Attribute Value

Part Number	TIP3055
Manufacturer	ST Microelectronics
ChipWorker Part#	CW350731
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Frequency	3 MHz
Voltage Rating (DC)	100 V
Current Rating	15.0 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	90 W
Breakdown Voltage (Collector to Emitter)	60 V
hFE Min	20 @4A, 4V
hFE Max	70
Input Power (Max)	90 W
DC Current Gain (hFE)	70
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	90 W
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Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	20.15 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/12/17

Product Description

The TIP3055 from STMicroelectronics is a through hole complementary power transistor in TO-247 package. This device manufactured in epitaxial base planar technology and suitable for general purpose, power linear and switching applications.
Collector to emitter voltage (Vce) is 70V at 100 ohm RBE
Collector current (Ic) is 15A
Power dissipation (Pd) is 90W
Collector to emitter saturation voltage of 3V at 10A collector current
DC current gain (hFE) of 5 at 10A collector current
Operating junction temperature range from 150°C

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