TIP32G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TIP32G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW8483559
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220AB PNP 40V 3A
Documentation

Datasheet

TIP32G Global Supplier

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TIP32G Specifications

Attribute	Attribute Value

Part Number	TIP32G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW8483559
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Frequency	3 MHz
Voltage Rating (DC)	-40.0 V
Current Rating	1.40 A
Number of Positions	3 Position
Polarity	PNP
Power Dissipation	2 W
Breakdown Voltage (Collector to Emitter)	40 V
Continuous Collector Current	3A
hFE Min	10 @3A, 4V
Input Power (Max)	2 W
DC Current Gain (hFE)	50
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	2000 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The versatility of this PNP TIP32G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.

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