TL074CNE4 - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TL074CNE4
Manufacturer

TI
ChipWorker Part#

CW44538520
Category

Operational Amplifier, OP Amp IC
Package

DIP-14
Description

TEXAS INSTRUMENTS TL074CNE4 Operational Amplifier, Quad, 4 Amplifier, 3MHz, 13V/µs, 7V to 36V, DIP, 14Pins
Documentation

Datasheet

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TL074CNE4 Specifications

Attribute	Attribute Value

Part Number	TL074CNE4
Manufacturer	TI
ChipWorker Part#	CW44538520
Category	Operational Amplifier, OP Amp IC
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	14 Pin
Case/Package	DIP-14
Supply Voltage (DC)	15.0 V
Supply Current	1.4 mA
Number of Circuits	4 Circuit
Number of Channels	4 Channel
Number of Positions	14 Position
Common Mode Rejection Ratio	70dB ~ 100dB
Input Offset Drift	18.0 µV/K
Bandwidth	3 MHz
Slew Rate	13.0 V/μs
Gain Bandwidth Product	3 MHz
Input Offset Voltage	3 mV
Input Bias Current	65 pA
Operating Temperature (Max)	70 ℃
Operating Temperature (Min)	0 ℃
Gain Bandwidth	3 MHz
Minimum CMRR Range	70 dB
Supply Voltage	7V ~ 36V
Supply Voltage (Max)	36 V
Supply Voltage (Min)	7 V
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Size-Width	6.35 mm
Operating Temperature	0℃ ~ 70℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The TL074CNE4 is a JFET-input Operational Amplifier incorporates well-matched, high-voltage JFET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates, low-input bias and offset currents and low offset-voltage temperature coefficient.
Low Noise
18nV/√Hz Equivalent Input Noise Voltage
Low Power Consumption
Wide Common-Mode and Differential Voltage Range
Output Short-circuit Protection
0.003% Typical Low Total Harmonic Distortion
Internal Frequency Compensation
Latch-up-free Operation
Common-Mode Input Voltage Range Includes VCC+
70dB Minimum CMRR
Device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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