TL084CN - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TL084CN
Manufacturer

TI
ChipWorker Part#

CW104954
Category

Operational Amplifier, OP Amp IC
Package

DIP-14
Description

Operational Amplifier, Quad, 4 Amplifier, 3MHz, 13V/µs, 7V to 36V, DIP, 14Pins
Documentation

Datasheet

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TL084CN Specifications

Attribute	Attribute Value

Part Number	TL084CN
Manufacturer	TI
ChipWorker Part#	CW104954
Category	Operational Amplifier, OP Amp IC
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	14 Pin
Case/Package	DIP-14
Supply Voltage (DC)	15.0 V
Supply Current	1.4 mA
Number of Circuits	4 Circuit
Number of Channels	4 Channel
Number of Positions	14 Position
Common Mode Rejection Ratio	70 dB
Input Offset Drift	18.0 µV/K
Bandwidth	3 MHz
Slew Rate	13.0 V/μs
Gain Bandwidth Product	3 MHz
Input Offset Voltage	3 mV
Input Bias Current	30 pA
Operating Temperature (Max)	70 ℃
Operating Temperature (Min)	0 ℃
Gain Bandwidth	3 MHz
Minimum CMRR Range	70 dB
Supply Voltage	7V ~ 36V
Supply Voltage (Max)	36 V
Supply Voltage (Min)	7 V
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Size-Length	19.3 mm
Size-Width	6.35 mm
Size-Height	4.57 mm
Operating Temperature	0℃ ~ 70℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/12/17

Product Description

The TL084CN is a JFET input operational amplifier (op amp) in 14 pin DIP package. This device incorporates high voltage JFET and bipolar transistors in a monolithic integrated circuit. The device features high slew rates, low input bias, low offset currents and low offset voltage temperature coefficient.
Low power consumption of 1.4mA/channel
Wide common mode and differential voltage ranges
Unity gain bandwidth of 3MHz
High slew rate of 13V/µs
Supply voltage range from 7V to 36V
Low input bias current of 30pA
Low input offset current of 5pA
Output short circuit protection
High input impedance JFET input stage
Operating temperature range from 0°C to 70°C
This device has limited built-in ESD protection. The leads should be shorted together or device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
Supply voltages larger than 36V for single supply or outside the range of ±18V for dual supply can permanently damage the device.

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