TLC272BCD - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TLC272BCD
Manufacturer

TI
ChipWorker Part#

CW10472673
Category

Operational Amplifier, OP Amp IC
Package

SOIC-8
Description

TEXAS INSTRUMENTS TLC272BCD Operational Amplifier, Dual, 2 Amplifier, 1.7MHz, 3.6V/µs, 3V to 16V, SOIC, 8Pins
Documentation

Datasheet

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TLC272BCD Specifications

Attribute	Attribute Value

Part Number	TLC272BCD
Manufacturer	TI
ChipWorker Part#	CW10472673
Category	Operational Amplifier, OP Amp IC
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Output Current	≤30 mA
Supply Current	1.9 mA
Number of Circuits	2 Circuit
Number of Channels	2 Channel
Number of Positions	8 Position
Power Dissipation	725 mW
Common Mode Rejection Ratio	65 dB
Input Offset Drift	1.80 µV/K
Bandwidth	1.7 MHz
Slew Rate	3.60 V/μs
Gain Bandwidth Product	1.7 MHz
Input Offset Voltage	290 µV
Input Bias Current	0.7 pA
Operating Temperature (Max)	70 ℃
Operating Temperature (Min)	0 ℃
Gain Bandwidth	2.2 MHz
Power Dissipation (Max)	725 mW
Minimum CMRR Range	65 dB
Supply Voltage	3V ~ 16V
Supply Voltage (Max)	16 V
Supply Voltage (Min)	3 V
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Size-Length	4.9 mm
Size-Width	3.91 mm
Size-Height	1.58 mm
Operating Temperature	0℃ ~ 70℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The TLC272 and TLC277 precision dual operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds approaching those of general-purpose BiFET devices.
These devices use Texas Instruments silicon-gate LinCMOS technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.
The extremely high input impedance, low bias currents, and high slew rates make these cost-effective devices ideal for applications previously reserved for BiFET and NFET products. Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC272 (10 mV) to the high-precision TLC277 (500 uV). These advantages, in combination with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs.
In general, many features associated with bipolar technology are available on LinCMOS operational amplifiers without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC272 and TLC277. The devices also exhibit low voltage single-supply operation, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail.
A wide range of packaging options is available, including small-outline and chip carrier versions for high-density system applications.
The device inputs and outputs are designed to withstand 100-mA surge currents without sustaining latch-up.
The TLC272 and TLC277 incorporate internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from 40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of 55°C to 125°C.

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