TPD2EUSB30ADRTR - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TPD2EUSB30ADRTR
Manufacturer

TI
ChipWorker Part#

CW545617
Category

TVS Diode
Package

SOT-3
Description

TEXAS INSTRUMENTS TPD2EUSB30ADRTR USB Interface, Full Speed USB, USB 3.0, 2.5V, SOT, 3Pins
Documentation

Datasheet

TPD2EUSB30ADRTR Global Supplier

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TPD2EUSB30ADRTR Specifications

Attribute	Attribute Value

Part Number	TPD2EUSB30ADRTR
Manufacturer	TI
ChipWorker Part#	CW545617
Category	TVS Diode
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-3
Supply Voltage (DC)	2.50V (max)
Operating Voltage	3.6 V
Capacitance	0.8 pF
Breakdown Voltage	4.5 V
Number of Channels	2 Channel
Number of Positions	3 Position
Power Dissipation	45 W
Data Rate	6.00 Gbps
Clamping Voltage	8 V
Test Current	1 mA
Peak Pulse Power	45 W
Min Breakdown Voltage	4.5 V
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage (Max)	2.5 V
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Size-Length	1.05 mm
Size-Width	0.85 mm
Size-Height	0.45 mm
Operating Temperature	-40℃ ~ 85℃ (TA)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The TPD2EUSB30ADRTR is a two-channel ESD/Surge Solution for high speed and low voltage interface. It is rated to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (contact). It also offers 5A (8/20µs) peak pulse current ratings per IEC 61000-4-5 (surge) specification. It also offers low 4.5V DC break-down voltage. The low capacitance, low break-down voltage and low dynamic resistance make the TPD2EUSB30A a superior protection device for high-speed differential IOs.
Supports USB 3.0 data rates (5Gbps)
IEC 61000-4-2 ESD Protection (level 4 contact)
IEC 61000-4-5 Surge protection
Low capacitance
0.6R Typical dynamic resistance
Flow-through pin mapping
Green product and no Sb/Br
Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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