TPL5110DDCT - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TPL5110DDCT
Manufacturer

TI
ChipWorker Part#

CW1615223
Category

Clock Chip, Timing IC
Package

TSOT-23-6
Description

Ultra Low Power Timer with MOS driver and MOSFET Power ON 6-SOT -40 to 105
Documentation

Datasheet

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TPL5110DDCT Specifications

Attribute	Attribute Value

Part Number	TPL5110DDCT
Manufacturer	TI
ChipWorker Part#	CW1615223
Category	Clock Chip, Timing IC
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	TSOT-23-6
Supply Voltage (DC)	1.80V (min)
Supply Current	35 nA
Number of Positions	6 Position
Quiescent Current	35.0 nA
Operating Temperature (Max)	105 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	1.8V ~ 5V
Supply Voltage (Max)	5.5 V
Supply Voltage (Min)	1.8 V
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Size-Length	3.05 mm
Size-Width	1.75 mm
Size-Height	1 mm
Operating Temperature	-40℃ ~ 105℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The TPL5110DDCT is an Ultralow Power Timer with MOS driver and MOSFET power ON ideal for power gating in duty cycled or battery powered applications. Consuming only 35nA, the TPL5110 can enable the power supply line and drastically reduce the overall system stand by current during the sleep time. Such power savings enable the use of significantly smaller batteries making it well suited for energy harvesting or wireless sensor applications. The TPL5110 provides selectable timing intervals from 100ms to 7200s and is designed for power gating applications. In addition, the TPL5110 has an unique one-shot feature where the timer will only power the MOSFET for one cycle.
35nA Typical current consumption at 2.5V
100ms to 7200s Selectable time intervals
1% Typical timer accuracy
Resistor selectable time interval
Watchdog functionality
Manual reset
Green product and no Sb/Br
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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