TPL5111DDCT - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TPL5111DDCT
Manufacturer

TI
ChipWorker Part#

CW9050204
Category

Clock Chip, Timing IC
Package

TSOT-23-6
Description

Ultra Low Power System Timer (35nA) for Power Gating in duty cycled applications 6-SOT -40 to 105
Documentation

Datasheet

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TPL5111DDCT Specifications

Attribute	Attribute Value

Part Number	TPL5111DDCT
Manufacturer	TI
ChipWorker Part#	CW9050204
Category	Clock Chip, Timing IC
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	TSOT-23-6
Supply Voltage (DC)	1.80V (min)
Supply Current	35 nA
Number of Positions	6 Position
Quiescent Current	35.0 nA
Operating Temperature (Max)	105 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	1.8V ~ 5V
Supply Voltage (Max)	5.5 V
Supply Voltage (Min)	1.8 V
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Operating Temperature	-40℃ ~ 105℃
Product Lifecycle Status	Active
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The TPL5111DDCT is a nano-timer ideal for power gating in duty cycled or battery-powered applications. Consuming only 35nA, the TPL5111 can be used to enable and disable the power supply for a micro-controller or other system device, drastically reducing the overall system standby current during the sleep time. This power saving enables the use of significantly smaller batteries and makes the TPL5111 well suited for energy harvesting or wireless sensor applications. It provides selectable timing intervals from 100ms to 7200s. In addition, it has unique One-shot feature where the timer will only assert its enable pulse for one cycle.
Resistor selectable time interval
Manual power-ON input
One-shot feature
1% Typical timer accuracy
35nA at 2.5V Typical current consumption
Green product and no Sb/Br
Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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- Anti-vibration foam
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