TPS3808G33DBVR - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TPS3808G33DBVR
Manufacturer

TI
ChipWorker Part#

CW1516163
Category

Power Monitor
Package

SOT-23-6
Description

Processor Supervisor 3.07V 0.4V to 5V 6Pin SOT-23 T/R
Documentation

Datasheet

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TPS3808G33DBVR Specifications

Attribute	Attribute Value

Part Number	TPS3808G33DBVR
Manufacturer	TI
ChipWorker Part#	CW1516163
Category	Power Monitor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SOT-23-6
Supply Voltage (DC)	6.50V (max)
Supply Current	0.0027 mA
Number of Positions	6 Position
Quiescent Current	2.40 µA
Threshold Voltage	3.07 V
Reset Threshold Voltage (Min)	3.0546 V
Reset Threshold Voltage (Max)	3.0853 V
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Accuracy	0.5 %
Supply Voltage (Max)	6.5 V
Supply Voltage (Min)	1.7 V
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Size-Length	2.9 mm
Size-Width	1.6 mm
Size-Height	1.15 mm
Operating Temperature	-40℃ ~ 125℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC

Product Description

The TPS3808G33DBVR is a Low Quiescent Current Programmable Delay Supervisory Circuit that monitors system voltages from 0.4 to 5V, asserting an open-drain RESET signal when the SENSE voltage drops below a preset threshold or when the manual reset (MR) pin drops to a logic low. The RESET output remains low for the user-adjustable delay time after the SENSE voltage and manual reset (MR) return above the respective thresholds. The TPS3808 device uses a precision reference to achieve 0.5% threshold accuracy for VIT
Power-on reset generator with adjustable delay time (1.25ms to 10s)
Very low quiescent current (2.4µA typical)
High threshold accuracy (0.5% typical)
Fixed threshold voltages for standard voltage rails from 0.9 to 5V & adjustable voltage down to 0.4V
Manual reset (MR) input
Open-drain reset output
Green product and no Sb/Br
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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