TS3A24159DGSR - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TS3A24159DGSR
Manufacturer

TI
ChipWorker Part#

CW2104504
Category

Analog Switch Ic, Analog Switch Multiplexer
Package

VSSOP-10
Description

TEXAS INSTRUMENTS TS3A24159DGSR Analog Switch, Dual Channel, SPDT, 2Channels, 0.34Ω, 1.65V to 3.6V, VSSOP, 10Pins
Documentation

Datasheet

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TS3A24159DGSR Specifications

Attribute	Attribute Value

Part Number	TS3A24159DGSR
Manufacturer	TI
ChipWorker Part#	CW2104504
Category	Analog Switch Ic, Analog Switch Multiplexer
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	10 Pin
Case/Package	VSSOP-10
Number of Outputs	4 Output
Supply Current	15 nA
Number of Circuits	2 Circuit
Number of Channels	2 Channel
Number of Positions	10 Position
Voltage Nodes	1.80 V, 2.50 V, 3.00 V, 3.30 V
Bandwidth	23 MHz
Number of Inputs	2 Input
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
3dB Bandwidth	23 MHz
Supply Voltage	1.65V ~ 3.6V
Supply Voltage (Max)	3.6 V
Supply Voltage (Min)	1.65 V
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Size-Length	3 mm
Size-Width	3 mm
Size-Height	1.02 mm
Operating Temperature	-40℃ ~ 85℃ (TA)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The TS3A24159DGSR is a single-pole double-throw (SPDT) dual bidirectional Analog Switch designed to operate from 1.65 to 3.6V. It offers low on-state resistance and excellent on-state resistance matching with the break-before-make feature, to prevent signal distortion during the transferring of a signal from one channel to another. The device has excellent total harmonic distortion (THD) performance, low On-state resistance and consumes very low power. These are some of the features that make this device suitable for a variety of markets and many different applications.
Specified break-before-make switching
Low on-state resistance (0.3R Maximum)
Low charge injection
Excellent ON-State Resistance Matching
Green product and no Sb/Br
Low Total Harmonic Distortion (THD)
Device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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