TS3USB221DRCR - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TS3USB221DRCR
Manufacturer

TI
ChipWorker Part#

CW1433437
Category

USB Chip, USB Interface IC
Package

VSON-10
Description

USB Interface, 1:2 Multiplexer/Demultiplexer Switch, USB 2.0, 2.3V, 3.6V, SON, 10Pins
Documentation

Datasheet

TS3USB221DRCR Global Supplier

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TS3USB221DRCR Specifications

Attribute	Attribute Value

Part Number	TS3USB221DRCR
Manufacturer	TI
ChipWorker Part#	CW1433437
Category	USB Chip, USB Interface IC
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	10 Pin
Case/Package	VSON-10
Supply Voltage (DC)	2.30V ~ 3.60V
Number of Outputs	2 Output
Contacts Type	DPST
Supply Current	30 µA
Number of Circuits	1 Circuit
Number of Channels	2 Channel
Number of Positions	10 Position
Data Rate	480 Mbps
Bandwidth	1.1 GHz
Number of Inputs	4 Input
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
3dB Bandwidth	1.1 GHz
Supply Voltage (Max)	3.6 V
Supply Voltage (Min)	2.3 V
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Size-Length	3 mm
Size-Width	3 mm
Size-Height	0.9 mm
Weight	0.0004177586004 kg
Operating Temperature	-40℃ ~ 85℃ (TA)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The TS3USB221DRCR is a high-bandwidth Switch specially designed for the switching of high-speed USB 2.0 signals with limited USB I/Os. The wide bandwidth (1.1GHz) of this switch allows signals to pass with minimum edge and phase distortion. The device multiplexes differential outputs from an USB host device to one of two corresponding outputs. The switch is bidirectional and offers little or no attenuation of the high-speed signals at the outputs. The TS3USB221 is designed for low bit-to-bit skew and high channel to channel noise isolation and is compatible with various standards, such as high-speed USB 2.0 (480Mbps).
1µA Low-power mode when OE is disabled
30µA Maximum low power consumption
1.1GHz Typical high bandwidth
0.2R Ron Maximum channel match
1.1GHz Typical high bandwidth
ESD >2000V human-body model (HBM)
Green product and no Sb/Br
Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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