TTA1943 - Toshiba

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TTA1943
Manufacturer

Toshiba
ChipWorker Part#

CW58471796
Category

BJT Transistor, BJT
Package

TO-3
Description

TO-3PL PNP 230V 15A
Documentation

Datasheet

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TTA1943 Specifications

Attribute	Attribute Value

Part Number	TTA1943
Manufacturer	Toshiba
ChipWorker Part#	CW58471796
Category	BJT Transistor, BJT
Documentation	Datasheet
Number of Pins	3 Pin
Case/Package	TO-3
Number of Positions	3 Position
Polarity	PNP
Power Dissipation	150 W
Breakdown Voltage (Collector to Emitter)	230 V
Continuous Collector Current	15A
DC Current Gain (hFE)	160
Operating Temperature (Max)	150 ℃
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Product Lifecycle Status	Active
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/06/15

Product Description

The TTA1943 from Toshiba is a through hole PNP silicon epitaxial transistor in TO-3 package. This device is commonly used for power amplification.
Collector to emitter voltage (Vce) is -230V
Collector current (Ic) is -15A
Power dissipation (Pd) is 150W
Collector to emitter saturation voltage of -3V at -8A collector current
DC current gain (hFE) of 80 at -1A collector current
Operating junction temperature range from 150°C

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